Rambus Inc. announced its first LPDDR3 offering targeted at the mobile industry. In the Rambus R+ solution set, the R+ LPDDR3 memory architecture is fully compatible with industry standards while providing improved power and performance. This allows customers to differentiate their products in a cost-effective manner with improved time-to-market.

Further helping improve design and development cycles, the R+ LPDDR3 is also available with Rambus' collaborative design and integration services. The R+ LPDDR3 architecture includes both a controller and a DRAM interface and can reduce active memory system power by up to 25% and supports data rates of up to 3200 megabits per second (Mbps), which is double the performance of existing LPDDR3 technologies. These improvements to power efficiency and performance enable longer battery life and enhanced mobile device functionality for streaming HD video, gaming and data-intensive apps.

The seed to the improved power and performance offered by the R+ LPDDR3 architecture is a low-swing implementation of the Rambus Near Ground Signaling technology. Essentially, this single-ended, ground-terminated signaling technology allows devices to achieve higher data rates with significantly reduced IO power. The R+ LPDDR3 architecture is built from ground up to be backward compatible with LPDDR3 supporting same protocol, power states and existing package definitions and system environments.

Additional key features of the R+ LPDDR3 include: 1600 to 3200Mbps data rates, Multi-modal support for LPDDR2, LPDDR3 and R+ LPDDR3, DFI 3.1 and JEDEC LPDDR3 standards compliant, Supports package-on-package and discrete packaging types, Includes LabStation(TM) software environment for bring-up, characterization, and validation in end-user application, Silicon proven design in GLOBALFOUNDRIES 28nm-SLP process. The R+ LPDDR3 memory controller and DRAM interface solutions are currently available.