MagnaChip Semiconductor Corporation announced that it now offers a second generation 0.35-micron BCD (Bipolar/CMOS/DMOS) high voltage process technology. This next generation process supports applications from 3.3V to 65V making it ideally suited for DC-DC converters and regulators, Power-over-Ethernet, LED drivers, level shifters, audio amplifiers, AC-DC controllers and converters, micro-converters and micro-inverters, as well as PMICs for the mobile and consumer markets. This second generation 0.35-micron BCD process features high-voltage MOSFETs with 2035% lower specific on resistance (Rsp) than the previous generation, achieved through process and device structure optimization.

IC designs typically require a broad range of voltage schemes and reliability requirements. This new BCD process features an option to select DMOS devices which best optimize Rsp values for scaled reliability levels. Besides featuring a lower Rsp, MagnaChip's proprietary deep-trench isolation technology yields about a five times smaller DMOS isolation area and much improved latch-up immunity, compared to conventional junction isolation approaches.

With the combination of lower Rsp, improved isolation and higher reliability, this next generation 0.35-micron BCD process will provide foundry customers with smaller and higher performance products. This new BCD process technology supports MagnaChip's various process module options which enhance design flexibility and cost effectiveness. These options include multi-time programmable (MTP) and high-reliability non-volatile memory cells, one-time programmable (OTP) cells, high capacitance per unit area, metal-insulator-metal capacitor, copper wire bonding, thick top metal, and redistribution layer process options.